专利名称：Intermodulation distortion reduction
methodology for high temperaturesuperconductor microwave filters
发明人：Yehoshua Dan Agassi,Daniel E. Oates申请号：US11240786申请日：20050927公开号：US07761125B1公开日：20100720
专利附图：
摘要：Intermodulation distortion (IMD) is known to be an impediment to progress insuperconductor-based filter technology. The present invention's methodology for
reducing IMD can open doors to heretofore unseen practical applications involving hightemperature superconductor (HTS) filters. Typical inventive practice includes (a)increasing the thickness d, and/or (b) changing the operation temperature T, of thefilter's HTS film. The film's thickness d is increased in such a way as to decrease the IMDpower Pin accordance with the material-independent proportionate relationship P∝1/d.The film's operation temperature T is bettered or optimized in accordance with thematerial-independent proportionate relationship P∝(λ(T))(K(T))/(Δ(T)), and further inaccordance with three individual material-dependent relationships, namely, betweenoperation temperature T and each of linear penetration depth λ, gap maximum Δ, andkernel K. Some inventive embodiments include oxygen overdoping of the film as anadditional/alternative IMD-reductive measure.
申请人：Yehoshua Dan Agassi,Daniel E. Oates
地址：Silver Spring MD US,Belmont MA US
国籍：US,US
代理人：Howard Kaiser
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