Method of growing a thin film onto a substrate

专利名称：Method of growing a thin film onto a

substrate

发明人：Sven Lindfors,Pekka T. Soininen申请号：US10893027申请日：20040716

公开号：US20040261706A1公开日：20041230

专利附图：

摘要：A method of growing a thin film onto a substrate placed in a reaction chamberaccording to the ALD method by subjecting the substrate to alternate and successivesurface reactions. The method includes providing a first reactant source and providing an

inactive gas source. A first reactant is fed from the first reactant source in the form ofrepeated alternating pulses to a reaction chamber via a first conduit. The first reactant isallowed to react with the surface of the substrate in the reaction chamber. Inactive gas isfed from the inactive gas source into the first conduit via a second conduit that isconnected to the first conduit at a first connection point so as to create a gas phasebarrier between the repeated alternating pulses of the first reactant entering thereaction chamber. The inactive gas is withdrawn from said first conduit via a third conduitconnected to the first conduit at a second connection point.

申请人：LINDFORS SVEN,SOININEN PEKKA T.

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