Method of fabricating integrated circuit device, i

专利名称：Method of fabricating integrated circuit

device, including removing at least a portionof a spacer

发明人：Shiang-Bau Wang申请号：US12827936申请日：20100630公开号：US08389371B2公开日：20130305

专利附图：

摘要：A method for fabricating an integrated device is disclosed. A sacrificial gatestack is provided with a line width narrower than the target width of the final gate

structure. After performing a tilt-angle implantation process, L-shape spacers are formedover the sidewalls of the sacrificial gate stack, and offset spacers are formed over thesidewalls of the L-shape spacers. An insulating layer is formed over the offset spacersand the substrate. Then, the sacrificial gate stack and the L-shape spacers are removed toform a trench in the insulating layer. A metal gate is then filled in the trench to form thefinal gate structure.

申请人：Shiang-Bau Wang

地址：Pingzchen TW

国籍：TW

代理机构：Lowe Hauptman Ham & Berner, LLP

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