Plasma source and methods for depositing thin film

专利名称：Plasma source and methods for depositing

thin film coatings using plasma enhancedchemical vapor deposition

发明人：Peter Maschwitz申请号：US14148606申请日：20140106公开号：US10290473B2公开日：20190514

专利附图：

摘要：The present invention provides novel plasma sources useful in the thin filmcoating arts and methods of using the same. More specifically, the present invention

provides novel linear and two dimensional plasma sources that produce linear and twodimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapordeposition. The present invention also provides methods of making thin film coatings andmethods of increasing the coating efficiencies of such methods.

申请人：AGC Flat Glass North America, Inc.,Asahi Glass Co., Ltd.,AGC Glass Europe S.A.

地址：Alpharetta GA US,Tokyo JP,Gosselies BE

国籍：US,JP,BE

代理机构：Rothwell, Figg, Ernst & Manbeck, P.C.

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