Method for manufacturing a transistor device compr

专利名称：Method for manufacturing a transistor

device comprising a germanium channelmaterial on a silicon based substrate, andassociated transistor device

发明人：Sun, Jianwu,Loo, Roger申请号：EP14191938.1申请日：20141105公开号：EP3018715A1公开日：20160511

专利附图：

摘要：Method for manufacturing a transistor device comprising a germanium channel

material on a silicon based substrate, the method comprising: a. providing an shallowtrench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectricstructures; b. partially recessing the silicon protrusion in order to provide a trench inbetween adjacent STI structures, and to provide a V-shaped groove at an upper surfaceof the recessed protrusion; c. growing a SiGe SRB layer in the trenches; d. growing agermanium based channel layer on the SiGe SRB layer; wherein the SiGe SRB layercomprises a germanium content x which is within the range of 20% to 99%, and whereinthe SRB layer has a thickness smaller than 400 nm; and associated transistor device.

申请人：IMEC VZW

地址：Kapeldreef 75 3001 Leuven BE

国籍：BE

代理机构：Patent Department IMEC

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