专利名称：Method and apparatus to compensate for
non-uniform film growth during chemicalvapor deposition
发明人：Gurtej S. Sandhu申请号：US08/605369申请日：19960222公开号：US05751896A公开日：19980512
摘要：An apparatus for heating, according to a predetermined heating profile, asurface carrying a film. The invention includes a source of radiant energy. The source ofradiant energy has several peak wavelengths, with each peak wavelength having a uniqueabsorption profile related to the thickness of the film. The source of radiant energy ispositioned to direct radiant energy toward the surface. Means are included for holdingthe source of radiant energy in a manner such that the combination of peak wavelengthsproduce the desired predetermined heating profile.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Kirkpatrick & Lockhart LLP
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