通用电桥-具有可选择的拓扑结构和电力电子设备的通用电源转换器的实现
Library
Power Electronics
Description
The Universal Bridge block implements a universal three-phase power converter that consists of up to six power switches connected in a bridge configuration. The type of power switch and converter configuration are selectable from the dialog box. 通用电桥模块可以看作一个通用的三相电源转换器，由最高六个电源开关连接在一个桥路中配置。电源开关和转换器配置类型参数在对话框中选择。
The Universal Bridge block allows simulation of converters using both naturally commutated (or line-commutated) power electronic devices (diodes or thyristors) and forced-commutated devices (GTO, IGBT, MOSFET).
通用电桥模块可以仿真自然换流器（或换线）电力电子器件（二极管或晶闸管）和强迫换流器件（GTO、IGBT，MOSFET）。
The Universal Bridge block is the basic block for building two-level voltage-sourced converters (VSC).
通用电桥模块是建立两级电压源变换器的基本块（VSC）。
The device numbering is different if the power electronic devices are naturally commutated or forced-commutated. For a naturally commutated three-phase converter (diode and thyristor), numbering follows the natural order of commutation: 不同自然换流或强迫换流电力电子器件的编号是不同的。一个自然整流三相转换器（二极管或晶闸管），编号：按下列顺序：
For
the case of a two-phase diode or thyristor bridge, and for any other bridge configuration, the order of commutation is the following:
两相二极管或晶闸管桥的情况下，和任何其他的桥配置，换向顺序如下：
GTO-Diode bridge:GTO-二极管电桥
IGBT-Diode bridge:
MOSFET-Diode and Ideal Switch bridges:
Dialog Box and Parameters
Number of bridge arms
Set to 1 or 2 to get a single-phase converter (two or four switching devices). Set to 3 to get a three-phase converter connected in Graetz bridge configuration (six switching
devices).
设置为1或2，得到一个单相转换器（两个或四个开关器件）。设置为3，得到一个连接在格雷茨电桥中的三相转换器（六开关设备）。 Snubber resistance Rs
The snubber resistance, in ohms (Ω). Set the Snubber resistance Rs parameter to inf to eliminate the snubbers from the model. 缓冲电阻，欧姆（Ω）。设置缓冲电阻的参数为inf 来消除来自模型的缓冲。 Snubber capacitance Cs
The snubber capacitance, in farads (F). Set the Snubber capacitance Cs parameter to 0 to eliminate the snubbers, or to inf to get a resistive snubber. 缓冲电容，法拉（F）。设置缓冲电容Cs参数为0消除缓冲电路，或INF得到电阻缓冲。
In order to avoid numerical oscillations when your system is discretized, you need to specify Rs and Cs snubber values for diode and thyristor bridges. For forced-commutated devices (GTO, IGBT, or MOSFET), the bridge operates satisfactorily with purely resistive snubbers as long as firing pulses are sent to switching devices.
当系统是离散的，为了避免数值振荡，你需要为二极管和可控硅整流桥指定Rs CS缓冲值。对于强制整流器件（GTO、IGBT、或MOSFET），带纯电阻缓冲器的电桥达到理想工作状态只要触发脉冲送到开关装置。
If firing pulses to forced-commutated devices are blocked, only antiparallel diodes operate, and the bridge operates as a diode rectifier. In this condition appropriate values of Rs and Cs must also be used. 如果触发脉冲强迫整流设备关闭，只有反平行二极管工作，并作为一个二极管整流桥。在这种情况下，Rs 和Cs必须设置适当的值 。
When the system is discretized, use the following formulas to compute approximate values of Rs and Cs:
当系统是离散的，使用以下公式来计算Rs 和Cs的近似值 ：
where
Pn = nominal power of single or three phase converter (VA) Pn代表单或三相转换器的标称功率 Vn = nominal line-to-line AC voltage (Vrms) 代表标称线间交流电压 f = fundamental frequency (Hz) 基本频率
Ts = sample time (s) 抽样时间
These Rs and Cs values are derived from the following two criteria: Rs 和Cs的值来自以下两个标准
The snubber leakage current at fundamental frequency is less than 0.1% of nominal
current when power electronic devices are not conducting.
当电力电子器件是不导电时，基波频率下的缓冲泄漏电流小于额定电流的0.1% The RC time constant of snubbers is higher than two times the sample time Ts.
These Rs and Cs values that guarantee numerical stability of the discretized bridge can be different from actual values used in a physical circuit. 缓冲电路的RC时间常数大于两倍的采样时间的。
Rs 和Cs的值，保证离散化的桥电桥的数值稳定性可以不同的与物理电路中使用的实际值。
Power electronic device
Select the type of power electronic device to use in the bridge. 选择在电桥中使用的电力电子装置的类型。
When you select Switching-function based VSC, a switching-function voltage source converter type equivalent model is used, where switches are replaced by two voltage sources on the AC side and a current source on the DC side. This model uses the same firing pulses as for other power electronic devices and it correctly represents harmonics normally generated by the bridge. 当你选择切换功能的VSC（变压设备），开关功能的电压源整流器型等效模型，其中开关是由两个交流侧电压源和直流源的电流代替的。该模型使用与其他电力电子设备相同的发射脉冲，它正确地反映正常产生的电桥谐波。
When you select Average-model based VSC, an average-model type of voltage source converter is used to represent the power-electronic switches. Unlike the other power electronic devices, this model uses the reference signals (uref) representing the average voltages generated at the ABC terminals of the bridge. This model does not represent harmonics. It can be used with larger sample times while preserving the average voltage dynamics.
当你选择基于VSC的平均模型、电压源变换器的平均模型类型是用来表示电力电子开关。不像其他的电力电子设备，这个模型使用的参考信号（Uref）代表在桥的ABC终端产生的平均电压。这个模型不代表谐波。它可以使用更大的样本时间，而公关eserving平均电压动态。
See the power_sfavg demo for an example comparing these two models to an Universal Bridge block using IGBT/Diode device.
对两个模型的一种通用桥块采用IGBT /二极管器件。 Ron
Internal resistance of the selected device, in ohms (Ω). Lon
Internal inductance, in henries (H), for the diode or the thyristor device. When the bridge is discretized, the Lon parameter must be set to zero. 内部电感，用（H），该二极管或晶闸管装置。当桥梁离散，LON参数必须设置为零。
Forward voltage Vf
This parameter is available only when the selected Power electronic device is Diodes or Thyristors.
此参数仅当选定的电力电子器件是二极管或晶闸管可用。
Forward voltage, in volts (V), across the device when it is conducting.
正向电压，在伏（V），穿过设备时，它正在进行。 Forward voltages [Device Vf, Diode Vfd]
This parameter is available when the selected Power electronic device is GTO/Diodes or IGBT/Diodes.
该参数可选择的电力电子装置是当GTO或IGBT /二极管/二极管。
Forward voltages, in volts (V), of the forced-commutated devices (GTO, MOSFET, or IGBT) and of the antiparallel diodes. [Tf (s) Tt (s)]
Fall time Tf and tail time Tt, in seconds (s), for the GTO or the IGBT devices. 下降时间tf和尾时间TT，秒（s），对GTO或IGBT器件来说 Measurements
Select Device voltages to measure the voltages across the six power electronic device terminals.
选择设备电压测量的六个电力电子设备终端的电压。
Select Device currents to measure the currents flowing through the six power electronic devices. If antiparallel diodes are used, the measured current is the total current in the forced-commutated device (GTO, MOSFET, or IGBT) and in the antiparallel diode. A positive current therefore indicates a current flowing in the forced-commutated device and a negative current indicates a current flowing in the diode. If snubber devices are defined, the measured currents are the ones flowing through the power electronic devices only.
选择设备电流来测量流经六个电力电子设备的电流。如果用反并联二极管，测量电流在强迫换相开发的总电流冰（GTO，MOSFET，或IGBT）在反平行二极管。正电流因此显示当前在强制换向装置和负电流表示电流二极管。如果定义了缓冲装置，测量电流的流经电力电子器件只。
Select UAB UBC UCA UDC voltages to measure the terminal voltages (AC and DC) of the Universal Bridge block.
选择UAB UBC UCA UDC电压测量端电压（AC DC）的通用桥块。
Select All voltages and currents to measure all voltages and currents defined for the Universal Bridge block.
选择所有的电压和电流来测量所有的电压和电流定义为通用桥块。
Place a Multimeter block in your model to display the selected measurements during the simulation. In the Available Measurements menu of the Multimeter block, the measurement is identified by a label followed by the block name.
将万用表的块中的模型显示在选定的测量仿真。在万用表的块可用的测量菜单，测量的标签标识其次是块名。 Measurement Device voltages Branch current Label Usw1:, Usw2:,Usw3:,Usw4:,Usw5:,Usw6: Isw1:, Isw2:, Isw3:, Isw4:, Isw5:, Isw6: Terminal voltages Uab:, Ubc:, Uca:, Udc: Inputs and Outputs The gate input for the controlled switch devices. The pulse ordering in the vector of
the gate signals corresponds to the switch number indicated in the six circuits shown in the Description section. For the diode and thyristor bridges, the pulse ordering corresponds to the natural order of commutation. For all other forced-commutated switches, pulses are sent to upper and lower switches of phases A, B, and C. 用于控制开关器件的栅极输入。在栅极信号的矢量中的脉冲顺序对应于在描述部分中显示的六个电路中表示的开关数。对于二极管和晶闸管桥，脉冲顺序对应于换向的自然顺序。对于所有其他强制换向开关，脉冲发送到上下开关相A、B和C
Topology Pulse Vector of Input g one arm [Q1,Q2] two arms [Q1,Q2,Q3,Q4] three arms [Q1,Q2,Q3,Q4,Q5,Q6] Example The power_bridges demo illustrates the use of two Universal Bridge blocks in an ac/dc/ac converter consisting of a rectifier feeding an IGBT inverter through a DC link. The inverter is pulse-width modulated (PWM) to produce a three-phase 50 Hz sinusoidal voltage to the load. In this example the inverter chopping frequency is 2000 Hz.
power_bridges案例 - 在交流/直流/交流转换器包括一个整流器供给IGBT逆变器通过直流环节两通用桥式块的使用。该逆变器是脉冲宽度国防部调节（PWM）产生三相50赫兹的正弦电压的负载。在这个例子中，逆变器的斩波频率为2000赫兹。
The IGBT inverter is controlled with a PI regulator in order to maintain a 1 pu voltage (380 Vrms, 50 Hz) at the load terminals.
IGBT逆变器是一个以PI调节器保持1的PU电压控制（380 Vrms，50 Hz）的终端负载。
A Multimeter block is used to observe commutation of currents between diodes 1 and 3 in the diode bridge and between IGBT/Diodes switches 1 and 2 in the IGBT bridge. 万用表块是用来观察二极管1和3之间的电流换向二极管桥和IGBT /二极管开关1和2在IGBT桥之间。
Start simulation. After a transient period of approximately 40 ms, the system reaches a steady state. Observe voltage waveforms at DC bus, inverter output, and load on Scope1. The harmonics generated by the inverter around multiples of 2 kHz are filtered by the LC filter. As expected the peak value of the load voltage is 537 V (380 V RMS).
启动仿真。经过约40毫秒的瞬态期间，该系统达到一个稳定的状态。观察在直流母线电压波形和负载，逆变器输出，一级。谐波的产生由逆变器的2千赫的倍数的倍数的滤波器的LC滤波器。正如预期的负载电压的峰值为537 V（380 V的有效值）。
In steady state the mean value of the modulation index is m = 0.8, and the mean value of the DC voltage is 778 V. The fundamental component of 50 Hz voltage buried in the chopped inverter voltage is therefore
在稳态的调制指数的平均值为M = 0.8，和直流电压的平均值为778 V。50赫兹的电压埋在斩波逆变器电压的基本组成部分是 Vab = 778 V * 0.612 * 0.80 = 381 V RMS
Observe diode currents on trace 1 of Scope2, showing commutation from diode 1 to diode 3. Also observe on trace 2 currents in switches 1 and 2 of the IGBT/Diode bridge (upper and lower switches connected to phase A). These two currents are complementary. A positive current indicates a current flowing in the IGBT, whereas a negative current indicates a current flowing in the antiparallel diode. 观察1种适用范围2二极管电流，显示从1到3的二极管整流二极管。同时观察微量2电流开关1和2的IGBT /二极管桥（上部和下部的开关连接A相A）。这两个电流是互补的。正电流指示电流IGBT中的流动，而负电流表示电流在反向并联二极管流动。
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